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arXiv · 1209.4480

Robust formation of skyrmions and topological Hall effect in epitaxial thin films of MnSi

Yufan Li·N. Kanazawa·X. Z. Yu·A. Tsukazaki·M. Kawasaki·M. Ichikawa·X. F. Jin·F. Kagawa·Y. Tokura
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Abstract

Magneto-transport properties have been investigated for epitaxial thin films of B20-type MnSi grown on Si(111) substrates. Both Lorentz transmission electron microscopy (TEM) images and topological Hall effect (THE) clearly point to the robust formation of skyrmions over a wide temperature-magnetic field region. New features distinct from those of bulk MnSi are observed for epitaxial MnSi films: a shorter (nearly half) period of the spin helix and skyrmions, and an opposite sign of THE. These observations suggest versatile features of skyrmion-induced THE beyond the current understanding.

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Yufan Li, N. Kanazawa, X. Z. Yu, A. Tsukazaki, M. Kawasaki, M. Ichikawa, X. F. Jin, F. Kagawa, Y. Tokura. 2012-09-20. Robust formation of skyrmions and topological Hall effect in epitaxial thin films of MnSi. https://doi.org/10.1103/physrevlett.110.117202

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