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arXiv · 1209.0250

Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As

Pham Nam Hai·Le Duc Anh·Shyam Mohan·Tsuyoshi Tamegai·Masaya Kodzuka·Tadakatsu Ohkubo·Kazuhiro Hono·Masaaki Tanaka
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Abstract

We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.

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Pham Nam Hai, Le Duc Anh, Shyam Mohan, Tsuyoshi Tamegai, Masaya Kodzuka, Tadakatsu Ohkubo, Kazuhiro Hono, Masaaki Tanaka. 2012-09-03. Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As. https://arxiv.org/abs/1209.0250

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