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arXiv · 1208.5300

Colossal electroresistance in metal/ferroelectric/semiconductor tunnel diodes for resistive switching memories

Zheng Wen·Chen Li·Di Wu·Aidong Li·Naiben Ming
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Abstract

We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both the height and the width of the tunneling barrier can be electrically modulated due to the ferroelectric field effect, leading to a colossal tunneling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 10$^4$ can be readily achieved at room temperature. The colossal tunneling electroresistance, reliable switching reproducibility and long data retention observed in these ferroelectric tunnel diodes suggest their great potential in non-destructive readout nonvolatile memories.

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Zheng Wen, Chen Li, Di Wu, Aidong Li, Naiben Ming. 2012-08-27. Colossal electroresistance in metal/ferroelectric/semiconductor tunnel diodes for resistive switching memories. https://doi.org/10.1038/nmat3649

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