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arXiv · 1208.5135

Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors

G. Zhao·Y. Zhang·D. G. Deppe·K. Konthasinghe·A. Muller
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Abstract

We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded $Q\approx$ 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at $T$ = 40 K) lasing was obtained with an incident optical power as low as $P_{\rm th}$ = 10 mW ($λ_{\rm p}$ = 808 nm). The laser linewidth was found to be $\approx$3 GHz at $P_{\rm p}\approx$ 5 $P_{\rm th}$.

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G. Zhao, Y. Zhang, D. G. Deppe, K. Konthasinghe, A. Muller. 2012-08-25. Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors. https://doi.org/10.1063/1.4750062

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