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arXiv · 1207.2901

Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

Benoit Roche·Eva Dupont-Ferrier·Benoit Voisin·Manuel Cobian·Xavier Jehl·Romain Wacquez·Maud Vinet·Yann-Michel Niquet·Marc Sanquer
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Abstract

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO$_2$ interface and electric field in the wire show that the values found are consistent with the device geometry.

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Benoit Roche, Eva Dupont-Ferrier, Benoit Voisin, Manuel Cobian, Xavier Jehl, Romain Wacquez, Maud Vinet, Yann-Michel Niquet, Marc Sanquer. 2012-07-12. Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy. https://doi.org/10.1103/physrevlett.108.206812

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