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arXiv · 1205.1973

Geant4 Simulation of a filtered X-ray Source for Radiation Damage Studies

M. Guthoff·O. Brovchenko·W. de Boer·A. Dierlamm·T. Müller·A. Ritter·M. Schmanau·H. -J. Simonis
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Abstract

Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can be deduced from the simulations.

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M. Guthoff, O. Brovchenko, W. de Boer, A. Dierlamm, T. Müller, A. Ritter, M. Schmanau, H. -J. Simonis. 2012-05-09. Geant4 Simulation of a filtered X-ray Source for Radiation Damage Studies. https://doi.org/10.1016/j.nima.2012.01.029

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