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arXiv · 1205.0408

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Hongyi Zhang·Yonghai Chen·Guanyu Zhou·Chenguang Tang·Zhanguo Wang
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Abstract

For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a monotonic increase at relatively low growth temperatures but a first increase and then decrease at higher temperatures, which were unexpected from the thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD growth was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was also given. Those results gave hints of the kinetic aspects of QD self-assembly.

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Hongyi Zhang, Yonghai Chen, Guanyu Zhou, Chenguang Tang, Zhanguo Wang. 2012-05-02. Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots. https://doi.org/10.1186/1556-276x-7-600

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