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arXiv · 1203.2875

Spin torque switching with the giant spin Hall effect of tantalum

Luqiao Liu·Chi-Feng Pai·Y. Li·H. W. Tseng·D. C. Ralph·R. A. Buhrman
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Abstract

We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.

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Luqiao Liu, Chi-Feng Pai, Y. Li, H. W. Tseng, D. C. Ralph, R. A. Buhrman. 2012-03-13. Spin torque switching with the giant spin Hall effect of tantalum. https://doi.org/10.1126/science.1218197

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