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arXiv · 1202.4401

Antiferromagnetic Domain Wall Engineering in Chromium Films

J. M. Logan·H. C. Kim·D. Rosenmann·Z. Cai·R. Divan·Oleg G. Shpyrko·E. D. Isaacs
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Abstract

We have engineered an antiferromagnetic domain wall by utilizing a magnetic frustration effect of a thin iron cap layer deposited on a chromium film. Through lithography and wet etching we selectively remove areas of the Fe cap layer to form a patterned ferromagnetic mask over the Cr film. Removing the Fe locally removes magnetic frustration in user-defined regions of the Cr film. We present x-ray microdiffraction microscopy results confirming the formation of a 90{\deg} spin-density wave propagation domain wall in Cr. This domain wall nucleates at the boundary defined by our Fe mask.

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J. M. Logan, H. C. Kim, D. Rosenmann, Z. Cai, R. Divan, Oleg G. Shpyrko, E. D. Isaacs. 2012-02-20. Antiferromagnetic Domain Wall Engineering in Chromium Films. https://doi.org/10.1063/1.4712598

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