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arXiv · 1202.4356

Graphene-like metallic-on-silicon field effect transistor

M. Dragoman·G. Konstantinidis·K. Tsagaraki·T. Kostopoulos·D. Dragoman·D. Neculoiu
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Abstract

In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar to a field effect transistor based on graphene. However, the transport in this transistor is not ambipolar, as in graphene, but unipolar.

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M. Dragoman, G. Konstantinidis, K. Tsagaraki, T. Kostopoulos, D. Dragoman, D. Neculoiu. 2012-02-20. Graphene-like metallic-on-silicon field effect transistor. https://doi.org/10.1088/0957-4484%2F23%2F30%2F305201

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