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arXiv · 1202.3267

Transport Through an Electrostatically Defined Quantum Dot Lattice in a Two-Dimensional Electron Gas

Srijit Goswami·M. A. Aamir·Christoph Siegert·Michael Pepper·Ian Farrer·David A. Ritchie·Arindam Ghosh
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Abstract

Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I(V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I(V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.

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Srijit Goswami, M. A. Aamir, Christoph Siegert, Michael Pepper, Ian Farrer, David A. Ritchie, Arindam Ghosh. 2012-02-15. Transport Through an Electrostatically Defined Quantum Dot Lattice in a Two-Dimensional Electron Gas. https://doi.org/10.1103/physrevb.85.075427

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