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arXiv · 1202.1627

Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films

Chih-Yuan Wu·Bo-Tsung Lin·Yu-Jie Zhang·Zhi-Qing Li·Juhn-Jong Lin
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Abstract

The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3--90 K. We found that the small-energy-transfer electron-electron ($e$-$e$) scattering process dominated the dephasing from a few K to several tens K. At higher temperatures, a crossover to the large-energy-transfer $e$-$e$ scattering process was observed. Below about 1--2 K, the dephasing time $\tau_\varphi$ revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant $D$, i.e., $\tau_\varphi (T \approx 0.3 \, {\rm K}) \propto 1/D$. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this low-carrier-concentration material is presented.

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Chih-Yuan Wu, Bo-Tsung Lin, Yu-Jie Zhang, Zhi-Qing Li, Juhn-Jong Lin. 2012-02-08. Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films. https://doi.org/10.1103/physrevb.85.104204

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