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arXiv · 1201.5950

Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

Y. Ando·K. Kasahara·S. Yamada·Y. Maeda·K. Masaki·Y. Hoshi·K. Sawano·M. Miyao·K. Hamaya
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Abstract

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.

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Y. Ando, K. Kasahara, S. Yamada, Y. Maeda, K. Masaki, Y. Hoshi, K. Sawano, M. Miyao, K. Hamaya. 2012-01-28. Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel. https://doi.org/10.1103/physrevb.85.035320

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