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arXiv · 1201.5679

Giant negative magnetoresistance in high-mobility 2D electron systems

A. T. Hatke·M. A. Zudov·J. L. Reno·L. N. Pfeiffer·K. W. West
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Abstract

We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at $B \simeq 1$ kG, where the magnetoresistivity develops a minimum emerging at $T \lesssim 2$ K. Unlike the zero-field resistivity which saturates at $T \simeq 2 $ K, the resistivity at this minimum continues to drop at an accelerated rate to much lower temperatures and becomes several times smaller than the zero-field resistivity. Unexpectedly, we also find that the effect is destroyed not only by increasing temperature but also by modest in-plane magnetic fields. The analysis shows that giant negative magnetoresistance cannot be explained by existing theories considering interaction-induced or disorder-induced corrections.

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A. T. Hatke, M. A. Zudov, J. L. Reno, L. N. Pfeiffer, K. W. West. 2012-01-27. Giant negative magnetoresistance in high-mobility 2D electron systems. https://doi.org/10.1103/physrevb.85.081304

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