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arXiv · 1201.3115

Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires

J. Liang·J. Wang·A. Paul·B. J. Cooley·D. W. Rench·N. S. Dellas·S. E. Mohney·R. Engel-Herbert·N. Samarth
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Abstract

We report four probe measurements of the low field magnetoresistance in single core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures.

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J. Liang, J. Wang, A. Paul, B. J. Cooley, D. W. Rench, N. S. Dellas, S. E. Mohney, R. Engel-Herbert, N. Samarth. 2012-01-15. Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires. https://doi.org/10.1063/1.4710524

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