Relocation of the topological surface state of Bi$_{2}$Se$_{3}$ beneath the surface by Ag intercalation

M. Ye; S. V. Eremeev; K. Kuroda; M. Nakatake; S. Kim; Y. Yamada; E. E. Krasovskii; E. V. Chulkov; M. Arita; H. Miyahara; T. Maegawa; K. Okamoto; K. Miyamoto; T. Okuda; K. Shimada; H. Namatame; M. Taniguchi; Y. Ueda; A. Kimura

arXiv · 1112.5869

Relocation of the topological surface state of Bi$_{2}$Se$_{3}$ beneath the surface by Ag intercalation

M. Ye·S. V. Eremeev·K. Kuroda·M. Nakatake·S. Kim·Y. Yamada·E. E. Krasovskii·E. V. Chulkov·M. Arita·H. Miyahara·T. Maegawa·K. Okamoto·K. Miyamoto·T. Okuda·K. Shimada·H. Namatame·M. Taniguchi·Y. Ueda·A. Kimura

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Abstract

We studied the Ag-intercalated 3D topological insulator Bi$_{2}$Se$_{3}$ by scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, combined with a first principles calculations. We demonstrate that silver atoms deposited on the surface of Bi$_{2}$Se$_{3}$ are intercalated between the quintuple layer (QL) units of the crystal, causing a expansion of the van der Waals gaps and the detachment of topmost QLs from the bulk crystal. This leads to a relocation (in the real space) of the the topological state beneath the detached quintuple layers, accompanied by the emergence of parabolic and "M-shaped" trivial bands localized above the relocated topological states. These novel findings open a pathway to the engineering of Dirac fermions shielded from the ambient contamination and may facilitate the realization of fault-tolerant quantum devices.

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M. Ye, S. V. Eremeev, K. Kuroda, M. Nakatake, S. Kim, Y. Yamada, E. E. Krasovskii, E. V. Chulkov, M. Arita, H. Miyahara, T. Maegawa, K. Okamoto, K. Miyamoto, T. Okuda, K. Shimada, H. Namatame, M. Taniguchi, Y. Ueda, A. Kimura. 2011-12-26. Relocation of the topological surface state of Bi$_{2}$Se$_{3}$ beneath the surface by Ag intercalation. https://arxiv.org/abs/1112.5869

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