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arXiv · 1112.2633

Two-dimensional superconductivity induced by high-mobility carrier doping in LaTiO3/SrTiO3 hetero-structures

J. Biscaras·N. Bergeal·S. Hurand·C. Grossetete·A. Rastogi·R. C. Budhani·D. LeBoeuf·C. Proust·J. Lesueur
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Abstract

In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electrons spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by field effect.

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J. Biscaras, N. Bergeal, S. Hurand, C. Grossetete, A. Rastogi, R. C. Budhani, D. LeBoeuf, C. Proust, J. Lesueur. 2012-06-04. Two-dimensional superconductivity induced by high-mobility carrier doping in LaTiO3/SrTiO3 hetero-structures. https://arxiv.org/abs/1112.2633

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