arXiv · 1112.1573
VO2 nanosheets: controlling the THz properties through strain engineering
Abstract
We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature along the cR axis, and the metallic state conductivity. Detailed analysis reveals a Mott-Hubbard like behavior along the rutile cR axis.
Explore related subjects
Keep this discovery
Elsa Abreu, Mengkun Liu, Jiwei Lu, Kevin G. West, Salinporn Kittiwatanakul, Wenjing Yin, Stuart A. Wolf, Richard D. Averitt. 2011-12-07. VO2 nanosheets: controlling the THz properties through strain engineering. https://doi.org/10.1088/1367-2630%2F14%2F8%2F083026
Cite the original work for its findings. Save a collection to share your selection of sources.