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arXiv · 1112.0250

Mechanical cleaning of graphene

A. M. Goossens·V. E. Calado·A. Barreiro·K. Watanabe·T. Taniguchi·L. M. K. Vandersypen
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Abstract

Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces charge carrier mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode AFM removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hBN dielectrics exhibited a mobility of ~36,000 cm2/Vs at low temperature.

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A. M. Goossens, V. E. Calado, A. Barreiro, K. Watanabe, T. Taniguchi, L. M. K. Vandersypen. 2011-12-01. Mechanical cleaning of graphene. https://doi.org/10.1063/1.3685504

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