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arXiv · 1111.6397

Silicon-CMOS Compatible In-Situ CCVD Grown Graphene Transistors with Ultra-High On/Off-Current Ratio

Pia Juliane Wessely·Frank Wessely·Emrah Birinci·Karsten Beckmann·Bernadette Riedinger·Udo Schwalke
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Abstract

By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1E7. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment.

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Pia Juliane Wessely, Frank Wessely, Emrah Birinci, Karsten Beckmann, Bernadette Riedinger, Udo Schwalke. 2011-11-28. Silicon-CMOS Compatible In-Situ CCVD Grown Graphene Transistors with Ultra-High On/Off-Current Ratio. https://doi.org/10.1016/j.physe.2011.12.022

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