Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes

Gennady I. Zebrev; Alexander A. Tselykovskiy; Valentin O. Turin

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arXiv · 1110.6319

Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes

Gennady I. Zebrev·Alexander A. Tselykovskiy·Valentin O. Turin

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Abstract

Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a unified phenomenological approach for modeling of the two drain current saturation modes is proposed.

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Gennady I. Zebrev, Alexander A. Tselykovskiy, Valentin O. Turin. 2011-10-28. Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes. https://arxiv.org/abs/1110.6319

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