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arXiv · 1110.5506

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

Nicolas Reckinger·Xiaohui Tang Vincent Bayot·Dmitri A. Yarekha·Emmanuel Dubois·Sylvie Godey·Xavier Wallart·Guilhem Larrieu·Adam Laszcz·Jacek Ratajczak·Pascal J. Jacques·Jean-Pierre Raskin
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Abstract

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.

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Nicolas Reckinger, Xiaohui Tang Vincent Bayot, Dmitri A. Yarekha, Emmanuel Dubois, Sylvie Godey, Xavier Wallart, Guilhem Larrieu, Adam Laszcz, Jacek Ratajczak, Pascal J. Jacques, Jean-Pierre Raskin. 2011-10-25. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing. https://doi.org/10.1063/1.3136849

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