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arXiv · 1110.5205

Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices

Gennady I. Zebrev·Evgeny V. Melnik·Daria K. Batmanova
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Abstract

Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed.

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Gennady I. Zebrev, Evgeny V. Melnik, Daria K. Batmanova. 2012-02-02. Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices. https://arxiv.org/abs/1110.5205

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