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arXiv · 1110.5086

Time-resolved second harmonic generation study of buried semiconductor heterointerfaces using soliton-induced transparency

Y. D. Glinka·N. H. Tolk·J. K. Furdyna
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Abstract

The transient second harmonic generation and linear optical reflectivity signals measured simultaneously in reflection from GaAs/GaSb/InAs and GaAs/GaSb heterostructures revealed a new mechanism for creating self-induced transparency in narrow bandgap semiconductors at low temperatures, which is based on the dual-frequency electro-optic soliton propagation. This allows the ultrafast carrier dynamics at buried semiconductor heterointerfaces to be studied.

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Y. D. Glinka, N. H. Tolk, J. K. Furdyna. 2011-10-23. Time-resolved second harmonic generation study of buried semiconductor heterointerfaces using soliton-induced transparency. https://doi.org/10.1103/physrevb.84.153304

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