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arXiv · 1110.4927

Near-field spectroscopy of silicon dioxide thin films

Lingfeng M. Zhang·Gregory O. Andreev·Zhe Fei·Alexander S. McLeod·Gerardo Dominguez·Mark Thiemens·Dimitri N. Basov·Antonio H. Castro Neto·Michael M. Fogler
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Abstract

We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a strong thickness dependence in the range from 2 to 300 {nm}. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a point dipole or an elongated spheroid. The latter model accounts for the antenna effect of the tip and gives a better agreement with the experiment. Possible applications of the near-field technique for depth profiling of layered nanostructures are discussed.

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Lingfeng M. Zhang, Gregory O. Andreev, Zhe Fei, Alexander S. McLeod, Gerardo Dominguez, Mark Thiemens, Dimitri N. Basov, Antonio H. Castro Neto, Michael M. Fogler. 2011-10-21. Near-field spectroscopy of silicon dioxide thin films. https://doi.org/10.1103/physrevb.85.075419

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