arXiv · 1109.6240
Large area quasi-free standing monolayer graphene on 3C-SiC(111)
Abstract
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy (ARPES) reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by X-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). Atomic force microscopy (AFM) and low energy electron microscopy (LEEM) demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Camilla Coletti, Konstantin V. Emtsev, Alexei A. Zakharov, Thierry Ouisse, Didier Chaussende, Ulrich Starke. 2011-09-28. Large area quasi-free standing monolayer graphene on 3C-SiC(111). https://doi.org/10.1063/1.3618674
Cite the original work for its findings. Save a collection to share your selection of sources.