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arXiv · 1108.3669

Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces

K. Kasahara·S. Yamada·K. Sawano·M. Miyao·K. Hamaya
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Abstract

The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with a measurable Schottky barrier height, depending on the contact area of the Fe$_{3}$Si/Ge(111) junction. These results indicate that one should distinguish between intrinsic and extrinsic mechanisms for discussing the formation of the Schottky barrier at metal/Ge interfaces. This study will be developed for understanding FLP for almost all the metal/semiconductor interfaces.

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K. Kasahara, S. Yamada, K. Sawano, M. Miyao, K. Hamaya. 2011-08-18. Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces. https://doi.org/10.1103/physrevb.84.205301

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