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arXiv · 1108.2686

Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures

F. Amet·J. R. Williams·A. G. F. Garcia·M. Yankowitz·K. Watanabe·T. Taniguchi·D. Goldhaber-Gordon
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Abstract

We report on the fabrication and measurement of a graphene tunnel junction using hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The tunneling behavior into graphene is altered by the interactions with phonons and the presence of disorder. We extract prop- erties of graphene and observe multiple phonon-enhanced tunneling thresholds. Finally, differences in the measured properties of two devices are used to shed light on mutually-contrasting previous results of scanning tunneling microscopy in graphene.

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F. Amet, J. R. Williams, A. G. F. Garcia, M. Yankowitz, K. Watanabe, T. Taniguchi, D. Goldhaber-Gordon. 2011-08-12. Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures. https://doi.org/10.1103/physrevb.85.073405

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