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arXiv · 1108.0083

Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Doping

Xiang Leng·Javier Garcia-Barriocanal·Boyi Yang·Yeonbae Lee·Allen M. Goldman
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Abstract

We successfully tuned an underdoped ultrathin YBa2Cu3O7-x film into the overdoped regime by means of electrostatic doping using an ionic liquid as a dielectric material. This process proved to be reversible. Transport measurements showed a series of anomalous features compared to chemically doped bulk samples and a different two-step doping mechanism for electrostatic doping was revealed. The normal resistance increased with carrier concentration on the overdoped side and the high temperature (180 K) Hall number peaked at a doping level of p$\sim$0.15. These anomalous behaviors suggest that there is an electronic phase transition in the Fermi surface around the optimal doping level.

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Xiang Leng, Javier Garcia-Barriocanal, Boyi Yang, Yeonbae Lee, Allen M. Goldman. 2011-07-30. Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Doping. https://arxiv.org/abs/1108.0083

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