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arXiv · 1107.2250

Amplification of spin-filtering effect by magnetic field in GaAsN alloys

V. K. Kalevich·M. M. Afanasiev·A. Yu. Shiryaev·A. Yu. Egorov
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Abstract

We have found that intensity $I$ and circular polarization degree $\rho$ of the edge photoluminescence, excited in GaAsN alloys by circularly polarized light at room temperature, grow substantially in the longitudinal magnetic field $B$ of the order of 1\,kG. This increase depends on the intensity of pumping and, in the region of weak or moderate intensities, may reach a twofold value. In two-charge-state model, which considers spin-dependent recombination of spin-oriented free electrons on deep paramagnetic centers, we included the magnetic-field suppression of spin relaxation of the electrons bound on centers. The model describes qualitatively the rise of $\rho$ and $I$ in a magnetic field under different pump intensities. Experimental dependences $\rho(B)$ and $I(B)$ are shifted with respect to zero of the magnetic field by a value of $\sim$170\,Gauss, while the direction of the shift reverses with change of the sign of circular polarization of pumping. As a possible cause of the discovered shift we consider the Overhauser field, arising due to the hyperfine interaction of an electron bound on a center with nuclei of the crystal lattice in the vicinity of the center.

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V. K. Kalevich, M. M. Afanasiev, A. Yu. Shiryaev, A. Yu. Egorov. 2011-07-12. Amplification of spin-filtering effect by magnetic field in GaAsN alloys. https://doi.org/10.1103/physrevb.85.035205

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