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arXiv · 1106.2403

Topological Insulator Cell for Memory and Magnetic Sensor Applications

T. Fujita·M. B. A. Jalil·S. G. Tan
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Abstract

We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the read out process is insensitive to disorder, variations in device geometry, and imperfections in the writing process.

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T. Fujita, M. B. A. Jalil, S. G. Tan. 2011-06-17. Topological Insulator Cell for Memory and Magnetic Sensor Applications. https://doi.org/10.1143/apex.4.094201

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