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arXiv · 1106.1326

Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

O. -P. Saira·A. Kemppinen·V. F. Maisi·J. P. Pekola
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Abstract

The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles n_qp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds n_qp < 0.033 um^-3 and γ< 1.6*10^-7 from transport measurements performed on Al/AlOx/Cu single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, typical number of quasiparticles in the superconducting leads is zero.

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O. -P. Saira, A. Kemppinen, V. F. Maisi, J. P. Pekola. 2012-01-04. Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor. https://doi.org/10.1103/physrevb.85.012504

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