Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors

O. V. Astafiev; V. P. Kalinushkin; V. A. Yuryev

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arXiv · 1106.0751

Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors

O. V. Astafiev·V. P. Kalinushkin·V. A. Yuryev

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Abstract

A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a mid-IR-laser microscope---being sensitive to accumulations of free carriers enables the study of both accumulations of electrically-active defects or impurities in bulk semiconductors and doped domains in semiconductor structures. The optical beam induced scattering mode of this microscope is designed for the investigation of recombination-active defects but unlike EBIC it requires neither Schottky barrier or p--n junction nor special preparation of samples

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O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev. 2011-06-03. Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors. https://arxiv.org/abs/1106.0751

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