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arXiv · 1106.0580

Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties

Z. Y. Wang·X. Guo·H. D. Li·T. L. Wong·N. Wang·M. H. Xie
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Abstract

Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs.

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Z. Y. Wang, X. Guo, H. D. Li, T. L. Wong, N. Wang, M. H. Xie. 2011-06-03. Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties. https://doi.org/10.1063/1.3610971

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