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arXiv · 1106.0552

Rashba spin-splitting control at the surface of the topological insulator Bi2Se3

Z. -H. Zhu·G. Levy·B. Ludbrook·C. N. Veenstra·J. A. Rosen·R. Comin·D. Wong·P. Dosanjh·A. Ubaldini·P. Syers·N. P. Butch·J. Paglione·I. S. Elfimov·A. Damascelli
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Abstract

The electronic structure of Bi2Se3 is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultra-high-vacuum conditions, can be overcome via in-situ potassium deposition. In addition to accurately setting the carrier concentration, new Rashba-like spin-polarized states are induced, with a tunable, reversible, and highly stable spin splitting. Ab-initio slab calculations reveal that these Rashba state are derived from the 5QL quantum-well states. While the K-induced potential gradient enhances the spin splitting, this might be already present for pristine surfaces due to the symmetry breaking of the vacuum-solid interface.

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Z. -H. Zhu, G. Levy, B. Ludbrook, C. N. Veenstra, J. A. Rosen, R. Comin, D. Wong, P. Dosanjh, A. Ubaldini, P. Syers, N. P. Butch, J. Paglione, I. S. Elfimov, A. Damascelli. 2011-06-03. Rashba spin-splitting control at the surface of the topological insulator Bi2Se3. https://doi.org/10.1103/physrevlett.107.186405

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