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arXiv · 1106.0183

Laser emission with excitonic gain in a ZnO planar microcavity

Thierry Guillet·Christelle Brimont·Pierre Valvin·Bernard Gil·Thierry Bretagnon·F. Medard·Martine Mihailovic·Jesús Zúñiga-Pérez·Mathieu Leroux·F. Semond·Sophie Bouchoule
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Abstract

The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.

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Thierry Guillet, Christelle Brimont, Pierre Valvin, Bernard Gil, Thierry Bretagnon, F. Medard, Martine Mihailovic, Jesús Zúñiga-Pérez, Mathieu Leroux, F. Semond, Sophie Bouchoule. 2011-06-01. Laser emission with excitonic gain in a ZnO planar microcavity. https://doi.org/10.1063/1.3593032

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