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arXiv · 1105.1956

Balanced superconductor-insulator-superconductor mixer on a 9~$μ$m silicon membrane

M. P. Westig·K. Jacobs·J. Stutzki·M. Schultz·M. Justen·C. E. Honingh
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Abstract

We present a 380-520 GHz balanced superconductor-insulator-superconductor (SIS) mixer on a single silicon substrate. All radio-frequency (RF) circuit components are fabricated on a $9 μ$m thick membrane. The intermediate frequency (IF) is separately amplified and combined. The balanced mixer chip, using Nb/Al/Al$_{2}$O$_{3}$/Nb SIS junctions, is mounted in a tellurium copper waveguide block at 4.2 K using Au beam lead contacts. We find uncorrected minimum receiver double-sideband noise temperatures of 70 K and a noise suppression of up to 18 dB, measured within a 440-495 GHz RF and a 4-8 GHz IF bandwidth, representing state-of-the-art device performance.

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M. P. Westig, K. Jacobs, J. Stutzki, M. Schultz, M. Justen, C. E. Honingh. 2011-06-27. Balanced superconductor-insulator-superconductor mixer on a 9~$μ$m silicon membrane. https://doi.org/10.1088/0953-2048/24/8/085012

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