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arXiv · 1105.1485

Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride

Edwin Kim·Tianhua Yu·Eui Sang Song·Bin Yu
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Abstract

We investigate key electrical properties of monolayer graphene assembled by chemical-vapor-deposition (CVD) as impacted by supporting substrate material. Graphene field-effect transistors (GFETs) were fabricated with carbon channel placing directly on hexagonal boron nitride (h-BN) and SiO2, respectively. Small-signal transconductance (gm) and effective carrier mobility (μeff) are improved by 8.5 and 4 times on h-BN, respectively, as compared with that on SiO2. Compared with GFET with exfoliated graphene on SiO2, gm and μeff measured from device with CVD graphene on h-BN substrate exhibits comparable values. The experiment demonstrates the potential of employing h-BN as a platform material for large-area carbon electronics.

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Edwin Kim, Tianhua Yu, Eui Sang Song, Bin Yu. 2011-06-07. Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride. https://doi.org/10.1063/1.3604012

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