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arXiv · 1105.0137

Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells

Ivan Knez·Rui-Rui Du·Gerard Sullivan
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Abstract

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. Electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys. Rev. Lett., 100, 236601 (2008)]. Edge modes persist inspite of sizable bulk conduction and show only a weak magnetic field dependence - a direct consequence of gap opening away from zone center.

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Ivan Knez, Rui-Rui Du, Gerard Sullivan. 2011-05-01. Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells. https://doi.org/10.1103/physrevlett.107.136603

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