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arXiv · 1105.0134

Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors

Blaise Mouttet
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Abstract

A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives equations for set, reset, and retention times based on the previously proposed model. Keywords- mem-resistor, RRAM, ReRAM

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Blaise Mouttet. 2011-05-01. Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors. https://arxiv.org/abs/1105.0134

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