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arXiv · 1105.0044

Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics

J. Raja Jain·Dany-Sebastien Ly-Gagnon·Krishna C. Balram·Justin S. White·Mark L. Brongersma·David A. B. Miller·Roger T. Howe
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Abstract

We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through fabrication and characterization of metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55 {\mu}m. The substrate fabrication process is compatible with complementary metal-oxide-semiconductor manufacturing and represents a potential route to wafer-scale integration of silicon-compatible optoelectronics.

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J. Raja Jain, Dany-Sebastien Ly-Gagnon, Krishna C. Balram, Justin S. White, Mark L. Brongersma, David A. B. Miller, Roger T. Howe. 2011-04-30. Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics. https://arxiv.org/abs/1105.0044

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