arXiv · 1104.0854
Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs
Abstract
A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.
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Ya. V. Terent'ev, C. Zoth, V. V. Bel'kov, P. Olbrich, C. Drexler, V. Lechner, P. Lutz, A. N. Semenov, V. A. Solov'ev, I. V. Sedova, G. V. Klimko, T. A. Komissarova, S. V. Ivanov, S. D. Ganichev. 2011-04-05. Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs. https://arxiv.org/abs/1104.0854
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