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arXiv · 1103.0497

Direct Low Temperature Nano-Graphene Synthesis over a Dielectric Insulator

Mark H. Rümmeli·Alicja Bachmatiuk·Andrew Scott·Felix Börrnert·Jamie H. Warner·Volker Hoffmann·Jarrn-Horng Lin·Gianaurelio Cuniberti·Bernd Büchner
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Abstract

Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post synthesis transfer of the graphene onto a Si wafer or in the case of epitaxial growth on SiC, temperatures above 1000 °C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nano-graphene and few layer graphene is directly formed over magnesium oxide and can be achieved at temperatures as low as 325 °C.

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Mark H. Rümmeli, Alicja Bachmatiuk, Andrew Scott, Felix Börrnert, Jamie H. Warner, Volker Hoffmann, Jarrn-Horng Lin, Gianaurelio Cuniberti, Bernd Büchner. 2011-03-02. Direct Low Temperature Nano-Graphene Synthesis over a Dielectric Insulator. https://arxiv.org/abs/1103.0497

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