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arXiv · 1102.5373

CuMn-V compounds: a transition from semimetal low-temperature to semiconductor high-temperature antiferromagnets

F. Maca·J. Masek·O. Stelmakhovych·X. Marti·K. Uhlirova·P. Beran·H. Reichlova·P. Wadley·V. Novak·T. Jungwirth
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Abstract

We report on a theoretical and experimental study of CuMn-V antiferromagnets. Previous works showed low-temperature antiferomagnetism and semimetal electronic structure of the semi-Heusler CuMnSb. In this paper we present theoretical predictions of high-temperature antiferromagnetism in the stable orthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs is at the transition from a semimetal to a semiconductor and we predict that CuMnP is a semiconductor. We show that the transition to a semiconductor-like band structure upon introducing the lighter group-V elements is present in both the metastable semi-Heusler and the stable orthorhombic crystal structures. On the other hand, the orthorhombic phase is crucial for the high Néel temperature. Results of X-ray diffraction, magnetization, transport, and neutron diffraction measurements we performed on chemically synthesized CuMnAs are consistent with the theory predictions.

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F. Maca, J. Masek, O. Stelmakhovych, X. Marti, K. Uhlirova, P. Beran, H. Reichlova, P. Wadley, V. Novak, T. Jungwirth. 2011-02-25. CuMn-V compounds: a transition from semimetal low-temperature to semiconductor high-temperature antiferromagnets. https://arxiv.org/abs/1102.5373

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