Graphene Field Effect Transistors: Diffusion-Drift Theory

Gennady I. Zebrev

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arXiv · 1102.2348

Graphene Field Effect Transistors: Diffusion-Drift Theory

Gennady I. Zebrev

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Abstract

Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects (interface traps) near or at the interface between graphene and insulated layers has also described.

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Gennady I. Zebrev. 2011-02-11. Graphene Field Effect Transistors: Diffusion-Drift Theory. https://arxiv.org/abs/1102.2348

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