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arXiv · 1102.2308

Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors

Antonio Di Bartolomeo·Filippo Giubileo·Salvatore Santandrea·Francesco Romeo·Roberta Citro·Thomas Schroeder·And Grzegorz Lupina
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Abstract

We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and metal electrodes, while charge storage at the graphene/SiO2 interface enhances it. Considering different Fermi energy from the neutrality point along the channel and partial charge pinning at the contacts, we propose a model which explains all features in gate voltage loops.

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Antonio Di Bartolomeo, Filippo Giubileo, Salvatore Santandrea, Francesco Romeo, Roberta Citro, Thomas Schroeder, And Grzegorz Lupina. 2011-02-11. Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors. https://doi.org/10.1088/0957-4484%2F22%2F27%2F275702

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