arXiv · 1102.2135
Compression of nanowires using a flat indenter: Elasticity measurement in nanoscale
Abstract
A new experimental approach for the characterization of the lateral elastic modulus of individual nanowires is demonstrated by implementing a micro/nano scale diametrical compression test geometry, using a flat punch indenter inside of a scanning electron microscope (SEM). A 250 nm diameter single crystal silicon nanowire is tested. Since silicon is highly anisotropic, the compression axis of the wire was determined by electron backscatter diffraction (EBSD). A two dimensional analytical closed-form solution based on a Hertz model is presented. The results of the analytical model are compared with those of finite-element simulations and to the experimental diametral compression results and show good agreement.
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Zhao Wang, W. M. Mook, Ch. Niederberger, R. Ghisleni, L. Philippe, J. Michler. 2011-02-10. Compression of nanowires using a flat indenter: Elasticity measurement in nanoscale. https://arxiv.org/abs/1102.2135
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