arXiv ScienceSearch

arXiv · 1012.4670

Broadband Dielectric Spectroscopy of Mixed Betaine Phosphate Betaine Phosphite, CuInP_2(S_xSe_{1-x})_6 crystals and PMN-PSN-PZN Ceramics

Abstract

TIn the first chapter, the current ideas about crystalline disordered system are surveyed and exemplified by the results allowing for the most straightforward interpretation. Exclusive consideration is intended for broadband dielectric spectroscopy results. Several critical remarks are presented about various predefined forms of the distribution of relaxation times and it physical meaning. The second chapter is devoted to the experimental and theoretical methods of the broadband dielectric spectroscopy, which have been applied by the author to collect the original data personally. The third chapter contains results of investigations of the mixed hydrogen-bond betaine phosphite betaine phosphate phase transitions dynamics. Here distribution of the relaxation times, double well potential parameters, local polarization distributions of the investigated crystals are presented. In the fourth chapter the dielectric spectroscopy results of mixed CuInP2(SxSe1-x)6 crystals are presented, phase diagram of these crystals is discussed. The fifth chapter contains the dielectric spectra of PMN-PSN-PZN relaxor ferroelectrics in a very wide frequency range. Formation of the polar nanoregions below the Burns temperature (700-800 K) is manifested by the appearance of the dielectric relaxation in the THz range and by splitting of polar modes in the infrared spectra. Dielectric spectra are analyzed in terms of distribution of relaxation times using the Tichonov regularization method. The distributions splits in two components near room temperature and the origin of both components are discussed. In the infrared spectra interesting phonon anomalies are observed.

Explore related subjects

Keep this discovery

BibTeXRIS

Jan Macutkevic. 2010-12-21. Broadband Dielectric Spectroscopy of Mixed Betaine Phosphate Betaine Phosphite, CuInP_2(S_xSe_{1-x})_6 crystals and PMN-PSN-PZN Ceramics. https://arxiv.org/abs/1012.4670

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci