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arXiv · 1012.4252

Fully electrically read-write device out of a ferromagnetic semiconductor

S. Mark·P. Dürrenfeld·K. Pappert·L. Ebel·K. Brunner·C. Gould·L. W. Molenkamp
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Abstract

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.

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S. Mark, P. Dürrenfeld, K. Pappert, L. Ebel, K. Brunner, C. Gould, L. W. Molenkamp. 2010-12-20. Fully electrically read-write device out of a ferromagnetic semiconductor. https://doi.org/10.1103/physrevlett.106.057204

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