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arXiv · 1012.1918

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

A. Richardella·D. M. Zhang·J. S. Lee·A. Koser·D. W. Rench·A. L. Yeats·B. B. Buckley·D. D. Awschalom·N. Samarth
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Abstract

We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.

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A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, N. Samarth. 2010-12-09. Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B. https://doi.org/10.1063/1.3532845

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